| PART |
Description |
Maker |
| RA03M3540MD RA03M3540MD-101 |
RF MOSFET MODULE 350-400MHz 38dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO
|
http://
Mitsubishi Electric Semiconductor
|
| NE5510179A-T1 NE5510179A |
3.5V的操作硅射频功率MOSFET1.9 GHz的输电功
3.5V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS
3.5 V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS
|
NEC Corp.
NEC[NEC]
CEL[California Eastern Labs]
|
| SKD146-L100 SKD146_12-L100 SKD146_16-L100 SKD146/1 |
Transistor; Type: Amplifiers/Bipolar; VCEO (V): 12; Ic (A): 0.075; Pc (W): 0.7; hFE: 100 to 200; fT (GHz) typ: 7.8; Cob (pF) max: 0.9; NF (dB) typ: 1; Package: MPAK
Transistor; Type: Amplifiers/Bipolar; VCEO (V): 4; Ic (A): 0.035; Pc (W): 0.05; hFE: 70 to 150; fT (GHz) typ: 20; Cob (pF) max: 0.15; NF (dB) typ: 1.15; Package: CMPAK-4
3-Phase Bridge Rectifier IGBT braking chopper
|
Semikron International
|
| TA130-155-49-32 |
13 - 15.5 GHz 2W Amplifiers
|
Transcom, Inc.
|
| TA060-120-45-30 |
6.0 ?12.0 GHz 30dBm Amplifiers
|
Transcom, Inc.
|
| TA020-060-40-33 |
2.0 ?6.0 GHz 33dBm Amplifiers
|
Transcom, Inc.
|
| RFSP5022 PRFS-P5022-EVL PRFS-P5022-009 PRFS-P5022- |
5.15-5.85 GHz U-NII Power Amplifier 5.15-5.85千兆赫的U - NII功率放大
5.15-5.85 GHz U-NII Power Amplifier 5150 MHz - 5850 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
Single-band power amplifiers
The RFS P5022 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 5.15-5.85 GHz ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| TA060-120-15-27 |
6.0 ?12.0 GHz 17dB Gain 27dBm Amplifiers
|
Transcom, Inc.
|
| AD8354ACP-R2 AD8354-EVAL AD8354ACP-REEL7 |
100 MHz - 2.7 GHz RF Gain Blocks Silicon Bipolar Amplifiers
|
Analog Devices
|
| Q62702-F659 BFQ29 BFQ29P |
From old datasheet system
NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.)
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| Q62702-F1347 BFP194 |
From old datasheet system
PNP Silicon RF Transistor (For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents)
|
SIEMENS[Siemens Semiconductor Group]
|
| CRF-22010-001 CRF-22010-101 |
62.5mW; 120VDC; SiC RF power MESFET. For class A,AB amplifiers; TDMA, EDGE, CDMA, W-CDMA, broadband amplifiers, CATV amplifiers, MMDS
|
CREE POWER
|
